mbr30h35pt thru mbr30h60pt www.vishay.com vishay general semiconductor revision: 21-nov-12 1 document number: 88792 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual common-cathode schottky rectifier high barrier technology for improv ed high temperature performance features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capability ? high frequency operation ? solder dip 275 c max.10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, fr eewheeling diodes, dc/dc converters or polarity protection application. mechanical data case: to-247ad (to-3p) molding compound meets ul 94v-0 flammability rating base p/n-e3 - rohs-compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 2 01 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum note (1) 2.0 s pulse width, f = 1.0 khz primary characteristics i f(av) 30 a v rrm 35 v, 60 v i fsm 200 a v f 0.58 v, 0.63 v i r 150 a t j max. 175 c pin 1 pin 3 case pin 2 to-247ad (to-3p) 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbr30h35pt mbr30h45pt mbr30h50pt mbr30h60pt unit maximum repetitive pe ak reverse voltage v rrm 35 45 50 60 v maximum working peak reverse voltage v rwm 35 45 50 60 v maximum dc blocking voltage v dc 35 45 50 60 v maximum average forward rectified current (fig. 1) i f(av) 30 a non-repetitive avalanche energy per diode at 25 c, i as = 1.5 a, l = 10 mh e as 80 mj peak forward surge current 8.3 ms single half sine-wave superimposed on ra ted load per diode i fsm 200 a peak repetitive reverse surge current per diode i rrm (1) 2.0 1.0 a peak non-repetitive reverse energy (8 /20 s wa veform) e rsm 30 20 mj electrostatic disc harge capacitor voltage human body model: c = 100 pf, r = 1.5 ? v c mj voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j - 65 to + 175 c storage temperature range t stg - 65 to + 175 c
mbr30h35pt thru mbr30h60pt www.vishay.com vishay general semiconductor revision: 21-nov-12 2 document number: 88792 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol test conditions mbr30h35pt mbr30h45pt mbr30h50pt mbr30h60pt unit typ. max. typ. max. maximum instantaneous forward voltage per diode v f (1) i f = 20 a t j = 25 c - 0.66 - 0.74 v i f = 20 a t j = 125 c 0.54 0.58 0.60 0.63 i f = 30 a t j = 25 c - 0.73 - 0.83 i f = 30 a t j = 125 c 0.62 0.66 0.66 0.70 maximum reverse current at rated v r per diode i r (2) t j = 25 c - 150 - 150 a t j = 125 c 6.0 25 4.0 25 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mbr30h35pt mbr30h45pt mbr30h50pt mbr30h60pt unit thermal resistance, junction to case per diode r ? jc 1.4 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-247ad mbr30h45pt-e3/45 6.13 45 30/tube tube 0 10 20 30 40 025 50 75 100 125 150 175 a v erage for w ard c u rrent (a) case temperat u re (c) 10 1 100 0 50 100 150 250 200 nu mber of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8.3 ms single half sine-wa v e
mbr30h35pt thru mbr30h60pt www.vishay.com vishay general semiconductor revision: 21-nov-12 3 document number: 88792 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical junction capacitance per diode fig. 6 - typical transient ther mal impedance per diode package outline dimensions in inches (millimeters) 0.01 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 10 100 mbr30h35pt - mbr30h45pt mbr30h50pt - mbr30h60pt t j = 150 c t j = 125 c t j = 25 c instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) 60 40 20 0 100 80 0.0001 0.001 0.1 0.01 1 10 100 mbr30h35pt - mbr30h45pt mbr30h50pt - mbr30h60pt percent of rated peak re v erse voltage (%) instantaneo u s re v erse leakage c u rrent (ma) t j = 150 c t j = 125 c t j = 25 c 0.1 1 100 10 1000 100 10 000 re v erse voltage (v) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p 0.01 0.1 0.1 1 1 10 10 t - p u lse d u ration (s) transient thermal impedance (c/w) pi n 1 pi n 3 case pi n 2 to-247ad (to-3p) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086 (2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 (1.98) ref. 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1 ref. both sides 0.030 (0.76) 0.020 (0.51) 0.118 (3.0) 0.108 (2.7)
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